E E 339 - CN14-pn diodes with diffused-inplanted doping profiles

E E 339 - CN14-pn diodes with diffused-inplanted doping profiles

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Unformatted text preview: 1 P-N junctions: diffused and implanted doping profiles P N junctions: diffused and implanted doping profiles 1 Diffused/implanted junctions that act abrupt and those that dont (that are overtly graded) Outline Summary 2 2 Obviously, the abrupt junction approximation that we have been using up to now can be good for epitaxially grown junctions unless the doping is deliberately varied from abrupt or is significantly diffused during subsequent thermal processing Abrupt junctions and graded junctions that act abrupt significantly diffused during subsequent thermal processing. Less obviously, the abrupt junction approximation can also be reasonable for large and shallow compensation doping diffusions or implantations over existing low constant or deep diffusion profiles such that one-sided diodes are formed which are dominated by the properties of the low doped side where the doping profile remains approximately constant as in our abrupt junction approximation .our abrupt junction approximation ....
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This note was uploaded on 11/07/2011 for the course E E 339 taught by Professor Leonardregister during the Spring '11 term at University of Texas at Austin.

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E E 339 - CN14-pn diodes with diffused-inplanted doping profiles

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