E E 339 - HW #4 - Solutions

# E E 339 - HW #4 - Solutions - Homework #4, Due Thursday...

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1 Homework #4, Due Thursday 10/13/2011 I. (20 Points) Problem 3.13 of text. For part (a) assume that the bar is actually 0.1 cm long. Also, remember that for samples of uniform cross section and conductivity, multiply conductivity by cross-sectional area and divide by length to get conductance , and, equivalently, multiply resistivity by length and divide by cross sectional area to get resistance . For part (b), well, let me point out that you should take a moment to think about it.

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2 II. (20 points) Referring to Fig. 3-25, consider a uniformly doped semiconductor bar with w = 0.1 mm, t = 10 μ m and L = 5 mm. For a magnetic field B z = 10 kG = 1 Wb/m 2 (where Wb are SI units) and a current of 1 mA, we have V AB = –2 mV and V CD = 100 mV. Find the type, concentration (in units of cm –3 ultimately) and mobility (in units of cm 2 /V-s ultimately) of the majority carriers. From notes: AB z x o qtV B I n or AB z x o qtV B I p Because V AB is negative we conclude that the material is n-type
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## This note was uploaded on 11/07/2011 for the course E E 339 taught by Professor Leonardregister during the Spring '11 term at University of Texas.

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E E 339 - HW #4 - Solutions - Homework #4, Due Thursday...

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