Perancangan Amplifier BJT

# Perancangan Amplifier BJT - CEdenganBiasDiskrit VCC Ri = r...

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Perancangan Penguat BJT

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CE dengan Bias Diskrit R 1 R 2 C 1 V CC V in R L C 2 V out Q 1 R C BB i R r R // π = C o R R = L C m v R g A = 2 1 // R R R BB = L C L C R R R // =
CE dengan Bias Sumber Arus Kolektor R B C 1 V CC V in R L C 2 V out Q 1 I C B i R r R // π = o o r R = C m v R g A =

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CE dengan Bias Sumber Arus Emitor R B C 1 V CC V in R L C 2 V out C 3 Q 1 R C I E B i R r R // π = C o R R = L C m v R g A = L C L C R R R // =
CE dengan R E dan Bias Diskrit R 1 R 2 R E C 1 V CC V in R L C 2 V out Q 1 C 3 R C C o R R = L C m v R g A = BB i R r R // π = () () () ( ) BB E e i BB E i R R r R R R r R // 1 // 1 + + = + + = β () E e L C v L C E m v R r R A R R r r g A + = + + = 1 α 2 1 // R R R BB = L C L C R R R // =

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CE dengan R E dan Sumber Arus Emitor R B C 1 V CC V in R L C 2 V out C 3 Q 1 R C I E C o R R = L C L C R R R // = R E () () B E i R R r R // 1 + + = β π () L C E m v R R r r g A 1 + + =
CC dengan Bias Diskrit R 1 R 2 R E R L C 1 C 2 V CC V in V out Q 1 () ( ) BB L E e i R R r R // 1 + + = β E e o R r R // = e L E L E v r R R A + = L B L E R R R // = 2 1 // R R R BB =

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CC dengan Bias Sumber Arus R B I E R L C 1 C 2 V CC V in V out Q 1 () ( ) B L e i R R r R // 1 + + = β e o r R = e L L v r R R A + =
CB dengan Bias Sumber Arus R B I E C 1 V CC V in R L C 2 V out Q 1 C 3 R C e i r R = C o R R = L C m v R g A =

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CB dengan Bias Diskrit R 1 R 2 R E C 1 V CC V in R L C 2 V out Q 1 C 3 R C E e i R r R // = C o R R = L C m v R g A = L C L C R R R // = 2 1 // R R R BB =
Contoh 1 Desain Common Emitor dengan Sumber Arus Emitor Rancanglah sebuah penguat dengan spesifikasi R in 600 Ω , R out 300 Ω , A v 25, dan R L 300 Ω Transistor β 150 Lihat hubungan paramater penguat di atas untuk rangkaian CE dengan bias sumber arus emitor B i R r R // π = C o R R = L C m v R g A =

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Contoh 1 Rancangan Awal Dari informasi R out Dari informasi A v dan hasil R C Dari hasil g m Ω = = 300 o C R R V A g g R R R R A g m m L C L C v m / 167 . 0 300 300 300 300 25 = × + = + = A I I I I A I I V g I E E C E C C T m C 00403 , 0 004 , 0 150 1 150 1 004 , 0 025 , 0 167 , 0 = + = + = = × = = β
Contoh 1 Rancangan Awal Dari informasi I C Dari informasi r π Parameter Rangkaian Sumber Arus Bias Emitor I E =4,03mA Resistansi Base R B =1,8k Ω Ω = × = = k R R r r R R B i i B 8 , 1 600 900 900 600 π Ω = = = 900 167 , 0 150 m g r β

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Contoh 1 Simulasi SPICE –Hasil Titik Kerja Operating point Perintah op Hasil bas = 5.19856e 02 emi = 7.29886e 01 in = 0.000000e+00 kol = 1.079988e+01 out = 0.000000e+00 vcc = 1.200000e+01 vcc#branch = 4.00039e 03 vs = 0.000000e+00 vs#branch = 0.000000e+00 Analisis Titik Kerja Transistor aktif Base Emitor Junction Forward Biased V BE 0,7V Collector Base Junction reverse biased Arus Kolektor 4,000mA
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Perancangan Amplifier BJT - CEdenganBiasDiskrit VCC Ri = r...

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