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ECE 2115 Lab 4 Josh

# ECE 2115 Lab 4 Josh - Joshua Dean Experiment 4...

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Joshua Dean Experiment 4 Characterization of an NPN Bipolar Junction Transistor March 2, 2011 The George Washington University School of Engineering and Applied Science ECE 2115 Engineering Electronics GTA: Bowei Zhang Lab Partner: Berk Bozoklar

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Introduction: The objective of this experiment is to analyze the BJT transistor, the base-emitter pn-junction and the base-collector pn-junction. This was done by using the Tektronix Model 571 Curve Tracer. Another objective was to characterize the transistor by using a power supply and Keithley Model 175 DMM. Background: Percentage error = [(Nominal Value – Measured Value)/(Nominal Value)]*100 Calculated Values Simulated Values I B V CE I C V BE β eta I B V CE I C V BE β eta 10uA 2V 1.25mA 682mV 120 10uA 2V 1.2mA 676mV 120 30uA 2V 4.856mA 710mV 160 30uA 2V 4.8mA 708mV 160 50uA 2V 8.1mA 720mV 160 50uA 2V 8.0mA 721mV 160 Table 1- Prelab Parameter Value Maximum Collector-Emitter Voltage (V CEO ) 40V Maximum Emitter-Base Voltage (V EBO ) 6.0V Maximum Continuous Collector Current (I C ) 200mA Maximum Collector-Base Voltage (V CBO ) 60V Maximum DC Current Gain ( β eta or h FE ) 300 Base-Emitter ON Voltage (V BE ) when V CE =5V and I C =10mA at room temperature ≈.7 Table 2- Parameters Figure 1- Circuit Page 2 of 12 ECE 2115 LAB 4
Materials: NPN Bipolar Junction Transistor Resistors 1kΩ 100kΩ Tektronix Model 571 Curve Tracer Keithley Model 175 Power Supply

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