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ECE 2115 Lab4 - Joshua Dean Berk Bozoklar Characterization...

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Joshua Dean Berk Bozoklar Characterization of an NPN Bipolar Junction Transistor (BJT) March 1, 2011 The George Washington University School of Engineering and Applied Science ECE 2115 Engineering Electronics Lab Section 31 Bowei Zhang Introduction The objective of this experiment is to characterize a BJT (using the Tektronix Model 571 Curve Tracer), characterize the base-emitter pn-junction (BEJ) and base-collector pn-junction (BCJ) of a BJT using the Tektronix Model 571 Curve Tracer, characterize a BJT using a Power Supply & Keithley Model 175 DMM and to compare measured characterization results to manufacturer specifications. Prelab The prelab asked for the simulation of a BJT circuit in PSPICE, along with resulting outputs and calculated values. The results are as follows: Calc ulat ed Valu es Simulated Values I B V C E I C V BE β et a I B V C E I C V BE β e t a 10u 2V 1.25mA 682m 120 10u 2V 1.2m 676m 1
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A V A A V 2 0 30u A 2V 4.856m A 710m V 160 30u A 2V 4.8m A 708m V 1 6 0 50u A 2V 8.1mA 720m V 160 50u A 2V 8.0m A 721m V 1 6 0 Figure -BJT circuit Figure - Current at Varying Voltages Figure - Voltage Levels Table -Prelab Values
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Parameter Value (with units) Maximum Collector-Emitter Voltage (V CEO ) 40V Maximum Emitter-Base Voltage (V EBO ) 6.0V Maximum Continuous Collector Current (I C ) 200mA Maximum Collector-Base Voltage (V CBO ) 60V Maximum DC Current Gain ( β
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