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Unformatted text preview: 2 layers • Solids are available in two forms – Tablet / Granular and Disc /Wafer form • BN discs are most commonly used oxidized at 750 - 1100 C to serve as the diffusion source Stacking Pattern for Solid Disc Type Dopants in a Diffusion Furnace Ion Implantation • An alternative to high temperature diffusion for introducing dopants • A beam of highly energetic dopant ions is aimed at the semiconductor target • Collision of the ions with the lattice atoms distorts the crystal structure • Annealing is performed to rectify the problem • Ion Implantation is now preferred and extensively used by companies like INTEL. Diffusion vs. Ion Implantation. Profiles Dopant Effect on Etching...
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- Fall '04
- Oxide, Ion implantation, dopants- POCl3