etch rates - . Etch Rates for Micromachining and IC...

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Unformatted text preview: . Etch Rates for Micromachining and IC Processing (A/min) v. 4.4 29 July 1996 U.C. Berkeley Microfabrication Laboratory / Berkeley Sensor & Actuator Center / Kirt R. Williams The top etch rate was measured by the author with fresh solutions, clean chambers, etc. The center and bottom values are the low and high etch rates observed by the author and others in the UCB Microlab using fresh and used solutions, clean and "dirty" chambers, etc. MATERIAL ETCHANT EQUIPMENT CONDITIONS Concentrated HF (49%) Wet Sink Room Temperature 10:1 HF Wet Sink Room Temperature 25:1 HF Wet Sink Room Temperature 5:1 BHF Wet Sink Room Temperature Phosphoric Acid (85%) Heated Bath with Reflux 160°C Silicon Etchant (126 HNO3 : 60 H2O : 5 NH4F) Wet Sink Room Temperature KOH (1 KOH : 2 H2O by weight) Heated Stirred Bath 80°C Aluminum Etchant Type A (16 H3PO4 : 1 HNO3 : 1 HAc : 2 H2O) Heated Bath 50°C Titanium Etchant (20 H2O : 1 H2O2 : 1 HF) Wet Sink Room Temperature H2O2 (30%) Wet Sink Room Temperature Piranha (∼50 H2SO4 : 1 H2O2) Heated Bath 120°C Acetone Wet Sink Room Temperature CF4+CHF3+He (90:30:120 sccm) Lam 590 Plasma 450W, 2.8T, gap=0.38cm, 13.56MHz CF4+CHF3+He (90:30:120 sccm) Lam 590 Plasma 850W, 2.8T, gap=0.38cm, 13.56MHz SF6+He (13:21 sccm) Technics PE II-A Plasma 100W, 250mT, gap≈2.6cm, 50kHz sq. wave CF4+CHF3+He (10:5:10 sccm) Technics PE II-A Plasma 200W, 250mT, gap≈2.6cm, 50kHz sq. wave SF6+He (175:50 sccm) Lam 480 Plasma 150W, 375mT, gap=1.35cm, 13.56MHz SF6+He (175:50 sccm) Lam 480 Plasma 250W, 375mT, gap=1.35cm, 13.56MHz SF6 (25 sccm) Tegal Inline Plasma 701 125W, 200mT, 40°C CF4+CHF3+He (45:15:60 sccm) Tegal Inline Plasma 701 100W, 300mT, 13.56MHz Cl2+He (180:400 sccm) Lam Rainbow 4420 Plasma 275W, 425mT, 40°C, gap=0.80cm, 13.56MHz HBr+Cl2 (70:70 sccm) Lam Rainbow 4420 Plasma 200W, 300mT, 40°C, gap=0.80cm, 13.56MHz Cl2+BCl3+CHCl3+N2 (30:50:20:50 sccm) Lam 690 RIE 250W, 250mT, 60°C, 13.56MHz SF6 (80 sccm) Tegal Inline Plasma 701 200W, 150mT, 40°C, 13.56MHz O2 (51 sccm) Technics PE II-A Plasma 50W, 300mT, gap≈2.6cm, 50kHz sq. wave O2 (51 sccm) Technics PE II-A Plasma 400W, 300mT, gap≈2.6cm, 50kHz sq. wave HF Vapor 1 cm over plastic dish Room temperature and pressure XeF2 Simple custom vacuum chamber Room temperature, 2.6 Torr Dry Ox F LTO undop >14k PSG unanl F PSG annld 36k Stoic Nitrid 140 0 Wet Ox 23k 18k 23k 230 230 340 15k 4700 11 Low-σ Nitrid 52 30 52 3 0 0 97 95 150 W 1500 6 1 - 9 2 1000 1200 6800 - 7 - 0.8 <1 37 Silicon 1500 1000 87 W 110 4000 28 28 42 2 4 3 4 19 19 42 3 <100> Silicon 14k 3100 1200 6000 >10k 4400 3500 4400 24 9 24 1700 9 Silicon nitrides 1000 900 1080 0.7 F - 94 W 380 0 Alumnium - <10 <9 77 41 77 0 0 0 - <10 Titanium - 12 - 120 W W W Tungsten - 0 0 0 0 0 Cleaning off metals and organics Photoresist - 0 0 0 0 - 0 0 0 Silicon oxides W Silicon oxides W Silicon nitrides 300 300 1000 1100 1900 1400 1900 2200 2200 2700 730 730 800 1900 2100 1500 2100 1700 1700 2100 670 670 760 W 4700 2400 4800 6000 2500 7600 310 W 6400 W TARGET MATERIAL Silicon oxides SC Si <100> - Poly n+ 0 Poly undop - Silicon oxides - 7 Silicon oxides - Silicon oxides Silicon nitrides Thin silicon nitrides Thick silicon nitrides Thin silicon nitrides Si-rich silicon nitrides Silicon Al/ 2% Si 42 0 42 2500 2500 12k W Sput Tung <50 Sput Ti F Sput Ti/W - OCG 820PR P0 Olin HntPR P0 0 11k <70 0 0 0 - - 0 0 1400 F 1000 0 0 9800 <20 0.25 20 - - - 550 390 4000 130 3000 - 0 0 0 F 0 - - F F 0 2 - 0 - 0 0 2100 8 4 6600 2600 6600 W 8800 - 0 0 0 0 0 0 <20 0 0 - 0 0 0 1800 2400 60 60 150 - <2 0 0 0 <10 190 190 1000 - F F 0 0 - 0 0 0 0 - 0 - >44k >39k W 4500 1900 - W W W 2200 2000 4200 4000 6800 820 3800 - W W W 350 6400 6000 6400 370 - W W W 710 730 W 620 550 800 1100 - W W W 2600 2600 6700 690 690 830 690 2900 2900 7200 630 730 6200 2500 7200 6700 5000 6700 480 230 480 900 1800 W 7300 3000 7300 7400 5500 7400 610 300 220 400 800 W 280 530 540 - W W W 770 1500 1200 2100 - W W W W 1700 2800 W 1100 1400 1400 2300 - W W W W 350 360 1100 1100 1600 320 W 320 530 450 600 - W W W 1500 1300 1500 3400 3100 3400 3400 2900 3400 400 1400 W 1300 830 2300 2800 2100 4200 2800 2800 2800 760 870 8400 7000 2000 7000 9200 W 5000 5000 W 3200 3200 3700 460 8 8 380 4 4 10 680 - 60 230 140 560 530 W W - - - 0 0 0 870 26 W W - - 670 750 W 740 930 860 W - - W 1200 1800 1500 2600 W 0 0 0 0 0 2800 2800 4000 0 W 0 2300 1900 2300 0 6000 1900 6400 - 0 - 3000 2400 3000 350 350 500 6300 3700 6300 2400 2400 4000 350 1300 600 3100 3100 360 Aluminum W 5700 3400 6300 450 450 740 4500 Tungsten W 5800 5400 Descumming photoresist - 0 0 1200 2000 2000 0 Ashing Photoresist - 0 0 0 0 0 0 0 0 0 0 0 0 - 3400 3600 Silicon oxides - 0 0 660 W 780 2100 1500 10 19 A 0 A - P0 P0 Silicon 4600 2900 100k 1900 1100 2500 1800 1100 2300 0 - 0 0 0 120 120 180 2 0 2 0 800 440 1000 290 50 380 - 0 0 Silicon W . . Notation: - =test not performed; W=not performed, but known to Work ( > 100 A/min); F=not performed, but known to be Fast ( > 10 kA/min); ∼ ∼ P=some of film Peeled during etch or when rinsed; A=film was visibly Attacked and roughened. Rates measured are rounded to two significant figures. Etch areas are all of a 4-inch wafer for the transparent films and half of the wafer for single-crystal silicon and the metals. Etch rates will vary with temperature and prior use of solution or plasma chamber, area of exposure of film, other materials present (e.g., photoresist), film impurities and microstructure, etc. Some variation should be expected. 2700 300 6300 3300 6100 2400 300 ...
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This note was uploaded on 11/16/2011 for the course MSE 5960 taught by Professor Douglas during the Fall '04 term at University of Florida.

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