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Lab 06 KOH etching and RIE

Lab 06 KOH etching and RIE - Fundamentals of...

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Fundamentals of Microfabrication Dry (RIE) and Wet (KOH) Etching Laboratory 1 Reminder: No shorts in the lab, lab-coats required, safety goggles and gloves required, wherever required acid protecting special gloves mandatory. Violators will not be allowed to attend the lab. Note: You are required to prepare KOH etch bath during the early stage of your lab. You will need this in Step IV (given below) for KOH etching. I. Photolithography: 1. Get the oxidized silicon wafer and spin on positive photoresist on both sides of wafer. Do this process sequentially. Do first back side and then the front side of the wafer (the term “front” means that the side which you are going to expose and pattern) 2. Soft bake the wafer for 2 minutes. 3. Using the provided mask, transfer the pattern onto the wafer, develop in 352 developer solution. 4. Hard bake the wafer for 8 minutes. 5. Put the wafer in the RIE chamber for reactive ion etching of silicon oxide. For this follow the procedure in step II. II. Reactive Ion Etching: Very important note: The wafer that you are using must have photoresist on both sides. RIE has the tendency to etch the back side of the edges of the wafer along the periphery, so coat your wafer with positive photoresist on both sides.
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