EMA 4125 HW _4 2011

EMA 4125 HW _4 2011 - the surface of the Si will the...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
1 a. Boron is predepostited on a silicon wafer with an initial concentration of 5 x 10 P 15 P atoms cm P -3 P . Conditions are 30 minutes at 1223 K. Calculate a) the amount deposited; b) the diffusion length; c) the concentration at the diffusion length. 1 b. After the predeposit step, the wafer of 1a. is subjected to drive-in at 1423 K for 2 h. Calculate: a) the junction depth; b) the concentration at that depth; and c) the surface concentration. 2. Silicon is exposed to a gas that establishes a concentration of 10 P 18 P atoms (Al) cm P -3 P on the surface of the silicon. The process is carried out at 1437 K. a) After 30 min. at what depth below
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: the surface of the Si will the concentration be 10 P 16 P atoms cm P-3 P ? b) Calculate the amount of Al (in atom cm P-2 P ) that diffuses into the Si after 30 min of treatment at 1437 K. 3. A thin layer of Au is plated on to the end of a Ni bar. The bar is annealed at 900 C. After the treatment, the concentration of Au at a distance of 0.05 cm from the end is 0.1 atom fraction of Au. At what distance from the end is the atom fraction of Au equal to 0.05? 4. 5....
View Full Document

This note was uploaded on 11/16/2011 for the course MSE 4125 taught by Professor Bourne during the Fall '11 term at University of Florida.

Page1 / 2

EMA 4125 HW _4 2011 - the surface of the Si will the...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online