EMA 4125 HW _4 2011

EMA 4125 HW _4 2011 - the surface of the Si will the...

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1 a. Boron is predepostited on a silicon wafer with an initial concentration of 5 x 10 P 15 P atoms cm P -3 P . Conditions are 30 minutes at 1223 K. Calculate a) the amount deposited; b) the diffusion length; c) the concentration at the diffusion length. 1 b. After the predeposit step, the wafer of 1a. is subjected to drive-in at 1423 K for 2 h. Calculate: a) the junction depth; b) the concentration at that depth; and c) the surface concentration. 2. Silicon is exposed to a gas that establishes a concentration of 10 P 18 P atoms (Al) cm P -3 P on the surface of the silicon. The process is carried out at 1437 K. a) After 30 min. at what depth below

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Unformatted text preview: the surface of the Si will the concentration be 10 P 16 P atoms cm P-3 P ? b) Calculate the amount of Al (in atom cm P-2 P ) that diffuses into the Si after 30 min of treatment at 1437 K. 3. A thin layer of Au is plated on to the end of a Ni bar. The bar is annealed at 900 C. After the treatment, the concentration of Au at a distance of 0.05 cm from the end is 0.1 atom fraction of Au. At what distance from the end is the atom fraction of Au equal to 0.05? 4. 5....
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This note was uploaded on 11/16/2011 for the course MSE 4125 taught by Professor Bourne during the Fall '11 term at University of Florida.

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EMA 4125 HW _4 2011 - the surface of the Si will the...

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