Take+Home+EMA+4125+ 2011

Take+Home+EMA+4125+ 2011 - TAKE HOME PROBLEM: EMA 4125 Due;...

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TAKE HOME PROBLEM: EMA 4125 Due; Part A: November 4 , 2011 Part B &C Dec 5, 2010 General Format: You can form groups of 5 or less. Each group will be assigned a number. Only one submission is required per group. Part A is an analytical solution while part B and parts C have to be solved numerically. You would like to anneal a boron implanted silicon surface with the pulsed laser beam. The laser beam increases the surface temperature close to melting point of silicon so that annealing of the defects can take place. Your job is to determine the time-temperature history of the near surface regions of the laser irradiated silicon surface and the changes in the boron diffusion profile. The following are the variables: Material Melting Temperature- 1485 C Thermal conductivity of Silicon = 0.25 W/m/K Density = 2.3 gm/cm 3 Specific Heat Capacity = 1.0 J/gm/.K Implantation profile The boron dose is the centered at 75 nm with FWHM of ( 40 + 10 x Group #) nm with the maximum concentration of 10E20 /cm3. Assume a Gaussian
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This note was uploaded on 11/16/2011 for the course MSE 4125 taught by Professor Bourne during the Fall '11 term at University of Florida.

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Take+Home+EMA+4125+ 2011 - TAKE HOME PROBLEM: EMA 4125 Due;...

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