CRYSTAL STRUCTURE AND LATTICE PARAMETERS OF IMPORTANT BINARY COMPOUND SEMICONDUCTORS

CRYSTAL STRUCTURE AND LATTICE PARAMETERS OF IMPORTANT BINARY COMPOUND SEMICONDUCTORS

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CRYSTAL STRUCTURE AND LATTICE PARAMETERS OF IMPORTANT BINARY COMPOUND SEMICONDUCTORS Element or Compound Name Crystal Structure a Lattice Constant at 300 K (Å) Energy Gap (eV) Band Type b Element C Carbon (diamond) D 3.56683 5.47 i Si Silicon D 5.43095 1.12 i Ge Germanium D 5.64613 0.66 i Sn Grey Tin D 6.48920 0.08 i IV-IV SiC Silicon carbide W a = 3.086, c = 15.117 3.00 i Si x Ge 1-x Silicon-germanium Z Vary with x i AlN Aluminum nitride W a = 3.112, c = 4.982 6.2 i III-V AlP Aluminum phosphide Z 5.4510 2.43 i AlAs Aluminum arsenide Z 5.6605 2.17 i AlSb Aluminum antimonide Z 6.1355 1.58 i BN Boron nitride Z 3.6150 ~7.5 i BP Boron phosphide Z 4.5380 2.0 i GaN Gallium nitride W a = 3.189, c = 5.185 3.36 d GaP Gallium phosphide Z 5.4512 2.26 i GaAs Gallium arsenide Z 5.6533
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Unformatted text preview: 1.42 d GaSb Gallium antimonide Z 6.0959 0.72 d InN Indium nitride W a = 3.54, c = 5.70 1.89 d InP Indium phosphide Z 5.8686 1.35 d InAs Indium arsenide Z 6.0584 0.36 d InSb Indium antimonide Z 6.4794 0.17 d II-VI CdS Cadmium sulfide Z 5.8320 2.42 d CdS Cadmium sulfide W a = 4.16, c = 6.756 2.42 d CdSe Cadmium selenide Z 6.050 1.70 d CdTe Cadmium telluride Z 6.482 1.56 d ZnO Zinc oxide R 4.580 3.35 d ZnS Zinc sulfide Z 5.420 3.68 d ZnS Zinc sulfide W a = 3.82, c = 6.26 3.68 d ZnSe Zinc selenide Z 5.668 2.71 d ZnTe Zinc telluride Z 6.103 2.26 d IV-VI PbS Lead sulfide R 5.9362 0.41 d PbSe Lead selenide R 6.128 0.27 d PbTe Lead telluride R 6.4620 0.31 d a D = Diamond, W = Wurtzite, Z = Zincblende, R = Rock salt. b i = Indirect, d = Direct...
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