6_Mobility_Boosters_in_Silicon_MOS_lecture2

110 easily achievable in finfet 110 nmos bad rotate

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Unformatted text preview: ievable in FinFET •  (110) nMOS bad •  Rotate pMOS / nMOS by 45 degree -> hard to integrate araswat tanford University 30 EE311/Strained Si 15 Mobility Booster Effects Can be Additive Crystal Orientation + Uniaxial Stress 1.E-06 Ioff [A/µm] 1.E-07 > 00 <1 -c n ha l ne pM O SiGe SD <110> S Wafer Wafer #1 and #2 +20% +15% 1.E-08 1.E-09 250 300 350 400 450 500 Ion [µA/µm] 550 600 650 700 Courtesy: F. Boeuf (ST Microelectronics) araswat tanford University 31 EE311/Strained Si Mobility Enhancement Innovations NMOS benefit PMOS benefit Biaxial Tensile Strain   Contact etch-stop liner (DSL)   Stress memorization technique (SMT) Dual Stress Liner  e-SiGe  Compressive Gate Poly  Substrate Orientation (HOT) Tensile Channel orientation (<100>) Stress Memory K. Ota et al., IEDM 2002; D.V. Singh et al., IEDM 2005 32 araswat tanford University  Hybrid Orientation NFET PFET H.S. Yang et al., IEDM 2004 SSDOI M. Yang et al., IEDM 2003 K. Rim et al., IEDM 2003 ISSCC 2006: T.C. Chen 32 EE311/Strained Si 16 Picking the Right High-! Material Strain Engineering in Novel Channel Materials Material ! Property " Si Ge GaAs InAs InSb Electron mobility 1600 3900 9200 40000 77000 Hole mobility 430 1900 400 500 850 Bandgap (eV) 1.12 0.66 1.424 0.36 0.17 Dielectric constant 11.8 16 12.4 14.8 17.7 Why Ge? • More symmetric and higher carrier mobilities •  New channel materials must be benchmarked against strained Si 24 ! Highest hole mobility • Easier integration on Si • Lower temperature processing a ra sw a t ! Integration on pre-processed Si t a n fo r d IEDM Short Course 2007 A Nainani APL, 96, 242110 araswat tanford University 33 EE311/Strained Si Germanium MOSFET •  By itself Ge pMOSFET has little advantage over strained-Si •  Strained Ge a neccessity Kobayashi, PhD Thesis, 2010 araswat tanford University 34 EE311/Strained Si 17 CMOS Channel Scenarios: Non-planar FETs with Uniaxial Strain Germanium MOSFET H4(%427,/-*1 @7,G !P(4)F-'%3G Strained Si % Relaxed SiGe 30 Ge E*4FC,...
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This document was uploaded on 11/18/2011.

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