HW1 - EE311 Homework #1 Assigned: April 6, 2011 Due: April...

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1 EE311 Homework #1 Assigned: April 6, 2011 Due: April 14, 20011 Problem 1: (10 points) Read the paper “Silicon CMOS devices beyond scaling” by W. Haensch et al. (posted on the website) and summarize the most fundamental scaling issues in a paragraph. As a device technology expert, if a semiconductor company, focusing on low power mobile applications, asked for your advice to pick one important area of research that will enable them to scale CMOS to nanoscale dimensions, what would be your recommendation? Why? Problem 2: (10 points) Read the paper “Advanced high-j dielectric stacks with polySi and metal gates: Recent progress and current challenges” by Gusev et al. is posted on the website. In a paragraph, summarize the most fundamental challenges encountered in developing a high-k/metal-gate technology. As a high-k/metal-gate expert, if your company asks you to pick a suitable gate-stack candidate for their high performance sub-20nm technology, what would be your recommendation? Why? Problem 3: (40 points) The objective of this problem is to assess the effects of scaling on the gate leakage current, power dissipation and transistor performance. We start with a 1996 production technology of N
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HW1 - EE311 Homework #1 Assigned: April 6, 2011 Due: April...

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