HW3 - EE311 - Spring 2011 PROBLEM SET #3 Assigned: April...

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EE311 - Spring 2011 PROBLEM SET #3 Assigned: April 28, Due: May 5 PROBLEM 1 (20 points) Read the following paper posted on the course website and summarize in one paragraph each the most important findings. Please ensure that you don’t duplicate conclusions from the paper itself. 1. Silicides and local interconnections for high-performance VLSl applications by R. W. Mann 2. High-k/metal gate materials and process for 32nm technology by C. S. Park et al. PROBLEM 2 (20 points) When a silicide is formed to contact the deep S/D regions, some of the silicon gets consumed. In the case of NiSi 1.83 nm of Si is consumed per nm of Ni to form 2.34 nm of CoSi 2 . In this problem, we try to study the effect of this consumption on the contact resistance. PROBLEM 3 (40 points) The figure below shows a greatly simplified schematic of the relevant cross-section. Assume a uniform box doping of 1e20 cm -3 arsenic in the deep S/D. Assume that the silicide has a barrier height of 0.66eV (~NiSi) to electrons. Calculate and plot the contact resistance per
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HW3 - EE311 - Spring 2011 PROBLEM SET #3 Assigned: April...

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