Interconnect_Cu

Interconnect_Cu - 1 EE311/ Cu Interconnect 1 tanford...

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Unformatted text preview: 1 EE311/ Cu Interconnect 1 tanford University araswat Copper Interconnect Technology Prof. Krishna Saraswat Department of Electrical Engineering Stanford University Stanford, CA 94305 saraswat@stanford.edu EE311/ Cu Interconnect 2 tanford University araswat Wire Half Pitch vs Technology Node Ref: J. Gambino, IEDM, 2003 ITRS 2002 Narrow line effects 2 EE311/ Cu Interconnect 3 tanford University araswat Performance Bo,leneck of Cu Interconnect ALD:3nm ALD:1nm All Combined without Barrier Grain Boundary Scattering Surface Scattering Bulk Resistivity 22 nm All Combined including Barrier 45 nm 65 nm 95 nm Technology Generation ALD:10nm ALD:3nm ALD:1nm All Combined without Barrier Grain Boundary Scattering Surface Scattering Bulk Resistivity 22 nm All Combined including Barrier 45 nm 65 nm 95 nm Technology Generation ALD:10nm Anti-diffusion barrier Surface scatterings Grain boundary scatterings l A Old New (scaled) Scaled wire with lower A and longer l has higher R,C and L and thus reduced bandwidth , higher delay and higher power dissipation EE311/ Cu Interconnect 4 tanford University araswat 1 1 A 1 C S1 1 A 1 /S 1 SC S1 0.5 0.5 1 1 A 1 C S1 1 0.5 C S1 0.5 0.5 A 1 /S 2 Interconnect Scaling Scenarios Scale Metal Pitch with Constant Height - R, C s and J increase by scaling factor - Higher aspect ratio for gapfill / metal etch - Need for lower resistivity metal, Low-k Scale Metal Pitch and Height - R and J increase by square of scaling factor - Sidewall capacitance unchanged - Aspect ratio for gapfill / metal etch unchanged- Need for very low resistivity metal with significantly improved EM performance 2 EE311/ Cu Interconnect 3 tanford University araswat Performance Bo,leneck of Cu Interconnect ALD:3nm ALD:1nm All Combined without Barrier Grain Boundary Scattering Surface Scattering Bulk Resistivity 22 nm All Combined including Barrier 45 nm 65 nm 95 nm Technology Generation ALD:10nm ALD:3nm ALD:1nm All Combined without Barrier Grain Boundary Scattering Surface Scattering Bulk Resistivity 22 nm All Combined including Barrier 45 nm 65 nm 95 nm Technology Generation ALD:10nm Anti-diffusion barrier Surface scatterings Grain boundary scatterings l A Old New (scaled) Scaled wire with lower A and longer l has higher R,C and L and thus reduced bandwidth , higher delay and higher power dissipation EE311/ Cu Interconnect 4 tanford University araswat 1 1 A 1 C S1 1 A 1 /S 1 SC S1 0.5 0.5 1 1 A 1 C S1 1 0.5 C S1 0.5 0.5 A 1 /S 2 Interconnect Scaling Scenarios Scale Metal Pitch with Constant Height - R, C s and J increase by scaling factor - Higher aspect ratio for gapfill / metal etch - Need for lower resistivity metal, Low-k Scale Metal Pitch and Height - R and J increase by square of scaling factor - Sidewall capacitance unchanged - Aspect ratio for gapfill / metal etch unchanged- Need for very low resistivity metal with significantly improved EM performance 3 EE311/ Cu Interconnect 5 tanford University araswat Low (Resistivity)...
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Interconnect_Cu - 1 EE311/ Cu Interconnect 1 tanford...

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