MatSci 201 HW4 2008

# MatSci 201 HW4 2008 - The current voltage characteristics...

This preview shows page 1. Sign up to view the full content.

MatSci 201: Introduction to Materials Homework #4: Due Wednesday, October 22, 2008 by 5 PM Submit in class or in the hanging folder outside 3035 Cook Hall No late homework accepted. Electronic and Optical Properties 1. Callister, Question 18-10 2. Callister, Question 18-19 3. Callister, Question 18-23 4. Callister Question 18-31 5. Starting with pure Si, we introduce 1 x 10 16 boron atoms/cm 3 and 8 x 10 16 phosphorus atoms/cm 3 . What type of semiconductor do we have> Justify with a short explanation and/or calculation. 6. Callister Question 18-40 7. Zinc selenide has a band gap of 2.58 eV. Over what range of wavelengths of visible light is it transparent? 8. In class we discussed solar cells based upon the pn junction.
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: The current voltage characteristics are defined by the standard equation: I = I o exp( eV / k B T ) − 1 [ ] , where the symbols have their usual meaning. In the presence of light with energy greater than the bandgap of the semiconductor, the preceding equation is modified by the addition of a term α G, where G is the solar intensity and α some positive constant, as follows: I = I o exp( eV / k B T ) − 1 [ ] − α G . a. Explain the minus sign in front of α G. b. Starting with the above expression, show that at sufficiently high solar intensities that the voltage output under open circuit conditions (I=0) is related to the solar intensity by V = k B T e ln G I o ....
View Full Document

{[ snackBarMessage ]}

Ask a homework question - tutors are online