Physics II Lab w answers_Part_52

Physics II Lab w answers_Part_52 - p-type semiconductor...

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115 p-type semiconductor n-type semiconductor Figure 1. Location of Fermi energy level in p and n type semiconductors. Figure 2. Energy bend band diagram of p-n junction diode under no bias condition. V o is the potential difference at the depletion region. I.3 A p-n junction semiconductor can be used in forward as well as in the reverse biasing mode. If V is the applied reverse voltage across the junction then the current in the external circuit can be expressed as follows: ) ( e n L p L qA I kT qV p n n n p p 1 1 ± ² ³ ³ ´ µ - · ¸ ¹ ¹ º » ± ² ³ ³ ´ µ + ± ² ³ ³ ´ µ = τ Where, L p,n = Recombination length of holes and electrons in semiconductors. τ p,n = Life time of holes and electrons. A = Surface area of the junction in p-n semiconductor diode. p n , n p = minority carrier density in n and p sides. V = is the applied reverse bias voltage across the junction.
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This note was uploaded on 11/26/2011 for the course PHY 2053 taught by Professor Lind during the Fall '09 term at FSU.

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Physics II Lab w answers_Part_52 - p-type semiconductor...

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