5._Ideal_diode_equation_2_

# 5._Ideal_diode_equation_2_ - MATSCI 302 April 11, 2008 The...

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MATSCI 302 April 11, 2008 The Ideal Diode Equation Please submit your project preference forms to Craig today. Email him if you are an off-campus student. Reading: Chapter 5 from Streetman’s text Motivation: We want to minimize the dark current in a solar cell so that we can attain a higher voltage. How does the dark current depend on the two doping levels, the charge carrier mobilities, the minority carrier lifetimes and other factors?

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Quantitative derivation of diode equation o qV F E C E V E T k qV n p p n B o e p p n n = = 0 = V 0 V ) ( V V q o - p F n F ) 1 ( - = T k qV o B e J J 0 = J ; ; T k V V q no po B o e x p x p ) ( ) ( ) ( - = - To see this, look back at the last lecture and consider what happens when E i varies by qV from one side to the other.
Injection of holes from the p side to the n side T k qV n p B o e p p = Without bias, T k V V q no po B o e x p x p ) ( ) ( ) ( - = - With bias, For low level injection the majority carrier concentration doesn’t change much, so ) ( po p x p p - 2245 Taking the ratio of the two equations above yields, T k qV n

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## This note was uploaded on 12/01/2011 for the course MS&E 302 taught by Professor Mcghee during the Spring '08 term at Stanford.

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5._Ideal_diode_equation_2_ - MATSCI 302 April 11, 2008 The...

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