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ece340Fall03HW10sol - ECE 340 Homework X Fall 2003 Due...

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ECE 340 Homework X Fall 2003 Due: Monday, October 20, 2003 (30 points total) 1. An abrupt Si p-n junction has the following properties at 300 K: p-side n-side A = 10 -3 cm 2 N a = 2x10 17 /cm 3 N d = 4x10 15 /cm 3 τ n = 0.1 μs τ p = 10 μs μ p = 190 cm 2 /V-s μ n = 1200 cm 2 /V-s μ n = 600 cm 2 /V-s μ p = 420 cm 2 /V-s (a) Draw the band diagram qualitatively under forward and reverse bias showing the quasi-Fermi levels. (b) Calculate the reverse saturation current due to holes, due to electrons and the total reverse saturation current. (c) Calculate the total injected minority carrier current for V = V o /3 and V o /2. (d) Assuming μ’s and τ ’s do not change with temperature, repeat part (c) for a temperature of T = 400 K at which the intrinsic carrier concentration n i = 6x10 12 /cm 3 . Solutions: (a): (b), Reverse saturation current due to the holes: , , p n side p n p n side D I qA p L = Einstein relation: 2 0.0259 420 10.88 / p p kT D cm s q µ = = × = 0.01043 p p p L D cm τ = = , 2 4 3 5.625 10 i n n n p cm n = = × , 19 3 4 15 , 10.88 1.6 10 10 5.625 10 9.387 10 0.01043 p n side p n p n side D I qA p A L = = × × × × × = × Reverse saturation current due to the electrons: , , n p side n p n p side D I qA n L = Einstein relation: 2 0.0259 600 15.54 / n n kT D cm s q µ = = × =
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