ece340Fall03HW10sol - ECE 340 Homework X Fall 2003 Due...

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ECE 340 Homework X Fall 2003 Due: Monday, October 20, 2003 (30 points total) 1. An abrupt Si p-n junction has the following properties at 300 K: p-side n-side A = 1 0 -3 cm 2 N a = 2x10 17 /cm 3 N d = 4x10 15 /cm 3 τ n = 0.1 μs p = 10 μs μ p = 190 cm 2 /V-s μ n = 1200 cm 2 /V-s μ n = 600 cm 2 /V-s μ p = 420 cm 2 /V-s (a) Draw the band diagram qualitatively under forward and reverse bias showing the quasi-Fermi levels. (b) Calculate the reverse saturation current due to holes, due to electrons and the total reverse saturation current. (c) Calculate the total injected minority carrier current for V = V o /3 and V o /2. (d) Assuming μ’s and ’s do not change with temperature, repeat part (c) for a temperature of T = 400 K at which the intrinsic carrier concentration n i = 6x10 12 /cm 3 . Solutions: (a): (b), Reverse saturation current due to the holes: , , pn s ide pn D I qA p L = Einstein relation: 2 0.0259 420 10.88 / pp kT D cm s q µ ==× = 0.01043 p L Dc m == , 2 43 5.625 10 i n n n p cm n × , 19 3 4 15 , 10.88 1.6 10 10 5.625 10 9.387 10 0.01043 D I qA p A L −− × × × × × = × Reverse saturation current due to the electrons: , , np s id e np e D I qA n L = Einstein relation: 2 0.0259 600 15.54 / nn kT m s q × =
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3 1.247 10 nn n L Dc m τ == × , 2 3 1125 i p p n nc m p , 19 3 15 3 , 15.54 1.6 10 10 1125 2.24 10 1.247 10
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ece340Fall03HW10sol - ECE 340 Homework X Fall 2003 Due...

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