ECE 440
Homework V
Fall 2005
Due: Friday, September 23, 2005
1.
A Ge bar 1μm long and 100 μm
2
in crosssectional area is doped with 1x10
17
/cm
3
gallium.
Find the current at 300 K with 10 V applied assuming that the saturation thermal velocity of
electrons in Ge is about 10
7
cm/s.
2.
How long does it take an average electron to drift
0.1 mm in (a) pure Si and (b) Si doped
with
6x10
16
/cm
3
donors at an electric field of 100 V/cm? Repeat for 10
5
V/cm. Assume that
the electron effective mass m
n
*=0.26 m
o
.
3.
Reconstruct Fig. 318. On the graph, plot the carrier concentration as a function of
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
 Spring '08
 Staff

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