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ECE 440
Homework VI
Fall 2005
Due: Monday, September 26, 2005
1.
(a) Construct a semilogarithmic plot such as Fig. 47 for GaAs doped with
1x10
17
/cm
3
acceptors and having 2x10
15
EHP/cm
3
created uniformly at t = 0. Assume that
τ
n
=
τ
p
=50 ns.
(b) Calculate the recombination coefficient
α
r
for part (a). Assume that this value of
α
r
applies when the GaAs sample is uniformly exposed to a steady state optical generation rate
g
op
= 10
21
EHP/cm
3
s. Find the steady state excess carrier concentration
∆
n =
∆
p.
2.
(a) A Ge bar 0.1 cm long and 100 μm
2
in crosssectional area is doped with 1x10
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
 Spring '08
 Staff

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