Unformatted text preview: W vs. N d for the junctions described in (a). 3. When a prolonged diffusion or a highenergy implantation is conducted to form a p/n junction. The doping profile near the junction is usually graded, and the stepjunction approach is no longer suitable to find the relationship between the width of the depletion region and the contact potential. However, the underlying principle used to establish equations 513 to 523 remains intact, and they can still be used to determine similar equations for the graded junction. Assume that the doping profile varies as N aN d =Gx where G is 10 20 /cm 4 in a linearly graded junction. (a) Find and plot the electric field, ε (x), for ∞ <x<+ ∞ . (b) Determine the relationship between the width of the depletion region and contact potential for the junction at equilibrium....
View
Full Document
 Spring '08
 Staff
 Pn junction, Si pn junction, linearly graded junction, contact potential Vo, Plot vo vs

Click to edit the document details