Unformatted text preview: W vs. N d for the junctions described in (a). 3. When a prolonged diffusion or a high-energy implantation is conducted to form a p/n junction. The doping profile near the junction is usually graded, and the step-junction approach is no longer suitable to find the relationship between the width of the depletion region and the contact potential. However, the underlying principle used to establish equations 5-13 to 5-23 remains intact, and they can still be used to determine similar equations for the graded junction. Assume that the doping profile varies as N a-N d =Gx where G is 10 20 /cm 4 in a linearly graded junction. (a) Find and plot the electric field, ε (x), for -∞ <x<+ ∞ . (b) Determine the relationship between the width of the depletion region and contact potential for the junction at equilibrium....
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- Spring '08
- P-n junction, Si p-n junction, linearly graded junction, contact potential Vo, Plot vo vs