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Unformatted text preview: W vs. N d for the junctions described in (a). 3. When a prolonged diffusion or a highenergy implantation is conducted to form a p/n junction. The doping profile near the junction is usually graded, and the stepjunction approach is no longer suitable to find the relationship between the width of the depletion region and the contact potential. However, the underlying principle used to establish equations 513 to 523 remains intact, and they can still be used to determine similar equations for the graded junction. Assume that the doping profile varies as N aN d =Gx where G is 10 20 /cm 4 in a linearly graded junction. (a) Find and plot the electric field, ε (x), for ∞ <x<+ ∞ . (b) Determine the relationship between the width of the depletion region and contact potential for the junction at equilibrium....
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
 Spring '08
 Staff

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