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Unformatted text preview: (a) Using mobility values from Fig. 3-23 (better yet the information sheet) and assuming that n = p =1 s, plot I p and I n versus distance on a diagram such as Fig. 5-17, including both sides of the junction. Neglect recombination within the space charge region, W. (b) Plot n(x p ) and p(x n ). (c) Determine the separation of quasi-Fermi levels at the position 2 m into the quasi neutral region in both sides of the junction. 3. A p +-n Si junction with a long n-region has the following properties: N d =2x10 16 /cm 3 ; D n = 25 cm 2 /s; p = 360 cm 2 /V-s; p =1 s. If we apply 0.7 V forward bias to the junction at 300 K, what is the electric field in the n-region far from the junction?...
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
- Spring '08