hw10 - 5 V/cm. 3. Calculate the capacitance for the...

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ECE 440 Homework X Fall 2005 Due: Friday, October 21, 2005 1. A p + -n silicon diode (V o = 0.956 volts) has a donor doping of 10 17 /cm 3 and an n- region width = 1 μm. Does it break down by avalanche or punchthrough? What if the doping is only 10 16 /cm 3 ? Refer to Fig. 5-22. 2. For a symmetric silicon p-n junction (N a =N d =2x10 17 /cm 3 ), determine the reverse breakdown voltage if the peak electric field in the junction at the breakdown is 5x10
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Unformatted text preview: 5 V/cm. 3. Calculate the capacitance for the following Si p +-n junction reverse biased at 1, 5 and 10 volts. The junction has N d =2x10 15 /cm 3 and cross sectional area = 0.001 cm 2 . Assume E F ~E v for the p-region. Plot 1/C 2 vs. V r for reverse biases 1, 5 and 10 volts. Demonstrate that the slope yields N d . Repeat calculations for N d =2x10 17 /cm 3 ....
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