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Unformatted text preview: B , assuming perfect emitter injection efficiency. (c) Calculate the emitter injection efficiency and the amplification factor , assuming the emitter region is long compared to L n . 4. A Si p-n-p transistor has the following properties at room temperature: n = p =1 s D n = D p =10 cm 2 /s A = cross-sectional area = 10-5 cm 2 N E =10 19 /cm 3 , N B =10 16 /cm 3 and N C =10 16 /cm 3 for emitter, base, and collector doping concentrations respectively. W E = 3 m = emitter width W = metallurgical base width = 1.5 m = distance between base-emitter junction and base-collector junction (a) Calculate the neutral base width W b for V CB = 0 and V EB = 0.3 V, repeat for 0.6V. (b) Calculate the base transport factor and the emitter injection efficiency for V EB = 0.3 and 0.6 V. (c) Calculate , ,I E , I B and I C for the two values of V EB ....
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
- Spring '08