Unformatted text preview: d1 =10 17 /cm 3 , 1.1x10 17 /cm 3 , 10 18 /cm 3 , and 1.01x10 18 /cm 3 . Also, estimate the “Amplification Factor” of this device for N d1 =10 17 /cm 3 and N d1 =10 18 /cm 3 . The “Amplification Factor” is defined as AF= ' I d / ' N d1 .For simplicity, use an average electron mobility of 1000 cm 2 /Vs for both layers and for various carrier densities to estimate the conductivity. 2. Redraw Figure 612 of band diagrams for the ideal MOS structure in an ntype silicon at (a) thermal equilibrium (b) electron accumulation (c) electron depletion and (d) strong inversion. Also, in the drawing show a simple circuit illustrating how the biasing is applied in each case. W t 2 t 1 D x=0 x=W...
View
Full
Document
This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
 Spring '08
 Staff
 Transistor

Click to edit the document details