Unformatted text preview: d1 =10 17 /cm 3 , 1.1x10 17 /cm 3 , 10 18 /cm 3 , and 1.01x10 18 /cm 3 . Also, estimate the “Amplification Factor” of this device for N d1 =10 17 /cm 3 and N d1 =10 18 /cm 3 . The “Amplification Factor” is defined as AF= ' I d / ' N d1 .For simplicity, use an average electron mobility of 1000 cm 2 /Vs for both layers and for various carrier densities to estimate the conductivity. 2. Redraw Figure 6-12 of band diagrams for the ideal MOS structure in an n-type silicon at (a) thermal equilibrium (b) electron accumulation (c) electron depletion and (d) strong inversion. Also, in the drawing show a simple circuit illustrating how the biasing is applied in each case. W t 2 t 1 D x=0 x=W...
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
- Spring '08