hw15 - charge Q i required to cause this shift in V FB ,...

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ECE 440 Homework XV Fall 2005 Due: Friday, December 2, 2005 1. An n + -polysilicon-gate p-channel MOS transistor is made on an n-type Si substrate with N d = 5x10 16 /cm 3 . The SiO 2 thickness is 100Å in the gate region, and the effective interface charge Q i is 2x10 11 qC/cm 2 . Sketch the C-V curve for this device and give important numbers for the scale. 2. The flat band voltage is shifted to –3V for an n + -polysilicon-SiO 2 -Si capacitor. The SiO 2 thickness is 120Å and the substrate doping is N a = 10 16 /cm 3 . Find the value of interface
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Unformatted text preview: charge Q i required to cause this shift in V FB , with ) ms given by Fig. 6-17. 3. Use Eq. 6-50 to calculate and plot I D (V D ,V G ) at 300 K for an n-channel Si MOSFET with an oxide thickness d=200 , a channel mobility n = 1000 cm2/V-s, Z=100 m, L=5 m, and N a = 10 14 , 10 15 , 10 16 , and 10 17 /cm 3 . Allow V D to range from 0 to 5 V and allow V G to take on values of 0, 1, 2, 3, 4, and 5 V. Assume that Q i = 2x10 11 qC/cm 2 ....
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.

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