hw18_solutions - ECE 440 Homework XVIII Solutions Spring...

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ECE 440 Homework XVIII Solutions Spring 2006 1. Refer to Fig. 1-13. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of In x Ga 1-x P is lattice-matched to GaAs? What is the bandgap energy of the In x Ga 1-x P layer? Also, assume that a p-n junction is made in the corresponding lattice-matched epitaxial layer to form a light emitting diode and isotropic light emits. In general, about half of the photons go toward the substrate side. If the In x Ga 1-x P diode can be grafted from its original GaAs substrate onto different substrates, which substrate among GaSb, InP, GaP and SiC is considered to be transparent? Namely, which substrate would not considerably absorb the light emitted from the p-n junction toward the substrate? If one assumes that the lattice constant varies linearly with composition for a ternary alloy (which is a good approximation) then the In x Ga 1-x P composition that lattice matches to GaAs can be found. However, before beginning examine (from Appendix III) the lattice constants
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This note was uploaded on 12/01/2011 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.

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hw18_solutions - ECE 440 Homework XVIII Solutions Spring...

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