hw5 - ECE 440 Homework V Spring 2006 Due: Friday, February...

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ECE 440 Homework V Spring 2006 Due: Friday, February 17, 2006 1. (a) A Si bar 0.1 cm long and 100 μm 2 in cross-sectional area is doped with 5x10 16 /cm 3 arsenic atoms. Find the current at 300 K with 10 V applied across the length. (b) Repeat for a similar Si bar 1 μm long. (c) Back to part (a); assuming the silicon bar warms up considerably to 600 K due to poor heat conduction, do you expect the current readout stays the same as that at 300 K? Will the current increase or decrease? Will the carrier concentration remain about the same? Use the attached carrier-temperature chart in HW IV to estimate the carrier concentration. 2. A wedge-shape silicon slab, as shown below, is uniformly doped with 5x10 16 /cm 3 aluminum atoms. (a) Find the current I, and determine the percentage of error if a uniform thickness of 1.1 μm for the slab is assumed to estimate the current. (b) At which end do the majority carriers drift faster? At x=0 or x=100 μm? What is the ratio of the drift velocity at x=0 to that at x=100 μm? 3. Reconstruct Fig. 3-18. On the graph, plot the carrier concentration as a function of
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hw5 - ECE 440 Homework V Spring 2006 Due: Friday, February...

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