ECE 440
Homework VI
Spring 2006
Due: Monday, February 20, 2006
1. (a) An ntype Si sample with N
d
= 1x10
17
/cm
3
is steadily illuminated such that g
op
= 3x10
21
EHP/cm
3
s. If
τ
n
=
τ
p
=1 μs for the excitation, calculate the separation in the quasiFermi
levels, (F
n
F
p
). Draw a band diagram such as Fig. 411.
(b) At t=0, the illumination in part (a) is terminated. Assuming the carrier lifetimes remain
the same, calculate the separation in the quasiFermi levels at t=4 μs. Draw a corresponding
band diagram at 300 K.
2. Refer to problem 1 part (a) in HW V. The same silicon bar is steadily illuminated at 300 K
and a uniform excess carriers are generated in the Si bar. Assume that
This is the end of the preview. Sign up
to
access the rest of the document.
This note was uploaded on 12/01/2011 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.
 Spring '11
 Leburton

Click to edit the document details