Unformatted text preview: 2x10 16 /cm 3 acceptors. Determine the threshold voltage, V T , required to achieve strong inversion and find the electric field in the oxide when the applied bias V=V T . Repeat for a different MOS where the SiO 2 thickness is 40 Å but the substrate doping is the same. 3. Repeat problem 2 to determine the gate bias required to achieve that E F = E i at the oxide/semiconductor interface....
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- Spring '11
- P-n junction, Extrinsic semiconductor, ideal MOS structure