{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

hw14_solutions

# hw14_solutions - ECE 440 Homework XIV Spring 2006 1 Redraw...

This preview shows pages 1–3. Sign up to view the full content.

ECE 440 Homework XIV Spring 2006 1. Redraw Figure 6-12 of band diagrams for the ideal MOS structure in an n-type silicon at (a) thermal equilibrium (b) electron accumulation (c) electron depletion and (d) strong inversion. Also, in the drawing show a simple circuit illustrating how the biasing is applied in each case.

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
2. For an ideal MOS structure, the SiO 2 thickness is 300 Å, and the substrate is doped with 2x10 16 /cm 3 acceptors. Determine the threshold voltage, V T , required to achieve strong inversion and find the electric field in the oxide when the applied bias V=V T . Repeat for a different MOS where the SiO 2 thickness is 40 Å but the substrate doping is the same. For an ideal MOS, the equation to determine threshold voltage is (6-33) F i d s i d T C Q C Q V φ φ 2 + = + = So we need to calculate the three unknown quantities. 0.365V ln = = = i A F i F n N q kT E E φ 2 7 8 14 10 15 . 1 10 300 10 85 . 8 9 . 3 cm F d C i i × = × = = ε 2 8 10 98 . 6 2 2 cm C qN qN qN qN W qN Q A F s A A
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 3

hw14_solutions - ECE 440 Homework XIV Spring 2006 1 Redraw...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online