Unformatted text preview: 2 /V-s and Z=10L. For the device, n + polysilicon is used as the gate metal. 3. Refer to the n-channel MOSFET in problem 1 whose N a = 10 17 /cm 3 . What is V T if the gate oxide thickness is reduced to 30Å? At this thickness, unfortunately, the leakage current through the gate begins to rise appreciably due to tunneling. To suppress the leakage current a thicker gate insulator is needed. In order to keep the threshold voltage the same, a different gate insulator having a larger dielectric constant, for example silicon nitride is required. Assuming all other parameters are kept the same, determine the nitride thickness that would give rise to the same V T as that in silicon dioxide. The dielectric constant of silicon nitride is about 7.0....
View Full Document
This note was uploaded on 12/01/2011 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.
- Spring '11