hw16_solutions

# hw16_solutions - ECE 440 Homework XVI Solutions Spring 2006...

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ECE 440 Homework XVI Solutions Spring 2006 1. For an n-channel Si MOSFET with an oxide thickness d=100 Å, a channel mobility μ n = 1000 cm 2 /V-s, Z=100 μm, and L=5 μm, determine the threshold voltages for N a = 2x10 15 and 2x10 17 /cm 3 , respectively. Calculate and tabulate I D (V D ,V G ) in the linear region at 300 K. Allow V D to take on values of 0.1, 0.3, 0.5, 0.7, 0.9 and 1.1 V for V G =2, 3, 4, and 5 V. Assume that Q i = 2x10 11 qC/cm 2 and n + polysilicon is used as the gate metal. Also, determine I D sat in the saturation region for each gate bias and doping. First, find the threshold voltage as done in homework #15. F i d i i ms T C Q C Q V φ 2 + Φ = (6-38) N A [cm -3 ] [] V ms Φ [ ] V f Φ [ ] 2 / cm C Q d [ ] 2 / cm F C i [] V V T 2x10 15 -0.9 0.306 -2.02x10 -8 3.45x10 -7 -0.323 2x10 17 -1.0 0.425 -2.38x10 -7 3.45x10 -7 0.448 To find the current in the MOSFET we use the expression for drain current.

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hw16_solutions - ECE 440 Homework XVI Solutions Spring 2006...

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