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Unformatted text preview: ECE 440 Homework XVII Solutions Spring 2006 1. An n-channel enhancement MOSFET with V T =2 V and (ZC i n /L)=0.5 mA/V 2 is to be operated in the saturation region with I D =10 mA. What is the lowest permissible V DS and what is the gate bias? This problem gives almost all of the system parameters. By plugging these into the equation for the drain saturation, one can find V DS . Remember that saturation only occurs when V D > V G V T . Once V DS has been found, since V T is known, V G can be calculated easily. 2. Refer to the n-channel MOSFET in problem 1 of HWXVI whose N a = 2x10 17 /cm 3 . A load resistor of 10 ohms is added between the drain contact and the battery, V D = 5 V. Determine the drain current for V G =5 V. Is the device operating in the linear region or saturation region? We have already studied the I-V characteristics of an n-channel MOSFET. ( ) ( ) & & & & - >- - < -- T G D T G i n T G D D D T G i n D V V V V V L C Z V V V V...
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This note was uploaded on 12/01/2011 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.
- Spring '11