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Unformatted text preview: substrate? 2. A symmetric pn junction of area 5cm x 5cm has rectifying IV characteristics such that I=I th [exp(qV/kT) 1], where I th = 12 nA. Assume that the minority carrier diffusion lengths L n =L p =2 m in each side of the junction, and the depletion width is 1 m. Upon solar illumination in a clear day an optical generation rate of 2x10 18 EHP/cm 3 is obtained uniformly at least one diffusion length deep into each side of the neutral region as well as within the depletion region. (a) Calculate the shortcircuit current and the opencircuit voltage for this illuminated junction. (b) Plot the IV curve for this solar cell. Repeat part (a) when some clouds block the sun and the optical generation rate reduces to a half....
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This note was uploaded on 12/01/2011 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.
 Spring '11
 Leburton

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