{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

646final_s10_eqnsb

646final_s10_eqnsb - ELEG 646 Spring 09 Electronic Device...

This preview shows pages 1–2. Sign up to view the full content.

1 ELEG 646 - Spring 09 Electronic Device Principles Final Examination 20 May 2010 NAME_______________________________ Time Limit: 120 minutes Closed Books and Notes. You may use your own calculator, but may not loan or borrow one (ask proctor if you have questions). Put expression in a final form as best you can. Guidelines: I. Full credit requires the final dimensions/ units for all numerical quantities that you calculate. II. Show all work and calculations for full credit; accuracy to 2 significant figures is sufficient. III. Assume that the material is silicon at room temperature (300 K), unless otherwise stated. IV. At 300K temperature; thermal energy k B T=0.026eV, silicon intrinsic concentration n i =1x10 10 cm -3 , recombination lifetimes: τ n , τ p = 1 μsec; dielectric constant κ Si = 11.8; In general; permittivity of free space ε o = 8.85x10 -14 F/cm; electron charge |q| = 1.6x10 -19 Coul; V. Equations: p op = i ħd/dx f FD (E) = 1/[1 + exp(E–E F )/k B T] E = Q V n = n i exp[(E F E i )/k B T]. p = n i exp[(E i E F )/k B T] n o p o = n i 2 np = n i 2 e (Fn-Fp)/kBT n = N C exp[-(E C -E F )/k B T] N C = 2.8 x10 19 cm -3

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

Page1 / 7

646final_s10_eqnsb - ELEG 646 Spring 09 Electronic Device...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online