646final_s10_eqnsb - ELEG 646 - Spring 09 Electronic Device...

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1 ELEG 646 - Spring 09 Electronic Device Principles Final Examination 20 May 2010 NAME_______________________________ Time Limit: 120 minutes Closed Books and Notes. You may use your own calculator, but may not loan or borrow one (ask proctor if you have questions). Put expression in a final form as best you can. Guidelines: I. Full credit requires the final dimensions/ units for all numerical quantities that you calculate. II. Show all work and calculations for full credit; accuracy to 2 significant figures is sufficient. III. Assume that the material is silicon at room temperature (300 K), unless otherwise stated. IV. At 300K temperature; thermal energy k B T=0.026eV, silicon intrinsic concentration n i =1x10 10 cm -3 , recombination lifetimes: τ n , τ p = 1 μsec; dielectric constant κ Si = 11.8; In general; permittivity of free space ε o = 8.85x10 -14 F/cm; electron charge |q| = 1.6x10 -19 Coul; V. Equations: p op = i ħd/dx f FD (E) = 1/[1 + exp(E–E F )/k B T] E = Q V n = n
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This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.

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646final_s10_eqnsb - ELEG 646 - Spring 09 Electronic Device...

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