ELEG 646; ELEG 446 - Nanoelectronic Device Principles – Spring 2005 Homework #5 - due Tuesday, 5 April 2005, in class 1. The donor and acceptor concentrations on the n- and p-sides of a Si abrupt p-n junction are equal to 1016cm-3. The whole semiconductor is illuminated uniformly such that the hole concentration in the neutral n-region rises to 1013cm-3. No current is allowed to flow. What will be the reading of a voltmeter whose positive terminal is connected to the p-side at 290K? (Hint: use law of the junction). 2. A Si abrupt p-n junction has No = 3 x 1018cm-3on the p-side and an area of 1.6 x 10-3cm2. The junction capacitance is 18 pF at a reverse bias of 3.2 V and 12 pF at 8.2 V. Calculate the built-in voltage and the donor concentration on the n-side. 3. A long-base Si abrupt p-n junction diode with a junction area of 10-2cm-2has ND= 1018cm-3, NA= 1017cm-3, τp= 10-8sec, τn= 10-6sec, Dp= 5.2 cm2sec -1, and Dn= 20 cm2sec -1. At 300 K, calculate the diode current with a forward bias of 0.5 V, and then with a reverse bias of 5 V. Include
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