646s05hw5 - ELEG 646; ELEG 446 - Nanoelectronic Device...

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ELEG 646; ELEG 446 - Nanoelectronic Device Principles – Spring 2005 Homework #5 - due Tuesday, 5 April 2005, in class 1. The donor and acceptor concentrations on the n- and p-sides of a Si abrupt p-n junction are equal to 10 16 cm -3 . The whole semiconductor is illuminated uniformly such that the hole concentration in the neutral n-region rises to 10 13 cm -3 . No current is allowed to flow. What will be the reading of a voltmeter whose positive terminal is connected to the p-side at 290K? (Hint: use law of the junction). 2. A Si abrupt p-n junction has No = 3 x 10 18 cm -3 on the p-side and an area of 1.6 x 10 -3 cm 2 . The junction capacitance is 18 pF at a reverse bias of 3.2 V and 12 pF at 8.2 V. Calculate the built-in voltage and the donor concentration on the n-side. 3. A long-base Si abrupt p-n junction diode with a junction area of 10 -2 cm -2 has N D = 10 18 cm -3 , N A = 10 17 cm -3 , τ p = 10 -8 sec, τ n = 10 -6 sec, D p = 5.2 cm 2 sec -1 , and D n = 20 cm 2 sec -1 . At 300 K, calculate the diode current with a forward bias of 0.5 V, and then with a reverse bias of 5 V. Include
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