Unformatted text preview: D = 10 15 cm-3 . The thickness of the gate oxide is 120 nm, and the charge density at the Si-SiO 2 interface is 3 x 10 11 charges cm-2 . Calculate (a) the flat-band voltage, (b) the threshold voltage, and (c) draw the energy band diagram of the system under thermal equilibrium and at the onset of strong inversion. 5. Consider a MOS capacitor of area 1 cm 2 made on n-silicon with N D = 1.5 x 10 14 cm-3 and an Al gate. The SiO 2 layer is 200 nm thick. The Si is 20 µ m thick and is epitaxially grown on n +-silicon substrate having N D = 10 19 cm-3 . Neglecting any interface charge between Si and SiO 2 , determine the flat-band capacitance, and C max for the structure, and sketch the C-V plot. Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s05.html Note: On each homework and report submission, you must please give your name, the due date, assignment number and the course number....
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- Spring '08
- donor concentration Nd, mos capacitor, Nanoelectronic Device Principles, gate MOS capacitor