Unformatted text preview: a = 6 x 10 15 cm-3 and an oxide thickness of 0.1 µ m. The SiO 2 has 10 10 charges cm-2 . Determine the threshold voltage of the transistor. When the transistor is operated in the linear region with V D = 0.5 V, calculate the gate voltage to obtain a drain current of 2 mA. Assume L = 10 µ m, µ n = 500 cm 2 /V-sec, and Z = 100L. Calculate the g m of the device and the cutoff frequency of operation f T . (b) What changes will occur in the characteristics of the MOSFET when the gate metal is replaced by p-polysilicon doped with N a > 10 19 cm-3 operated at the same current in the linear region with V D = 0.5 V? Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s05.html Note: On each homework and report submission, you must please give your name, the due date, assignment number and the course number....
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- Spring '08
- Threshold voltage, n-channel Si MOSFET, nchannel Si MOSFET, Si- SiO2 interface