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Unformatted text preview: the built-in voltage and the donor concentration N D on the n-side. 4. A long-base Si abrupt p-n junction diode with a junction area of 10-2 cm-2 has N D = 10 18 cm-3 , N A = 10 17 cm-3 , τ p = 10-8 sec, τ n = 10-6 sec, D p = 5.2 cm 2 sec-1 , and D n = 20 cm 2 sec-1 . Calculate the diode current at a temperature of 300 K under a forward bias of 0.5 V. Include the generation-recombination current and assume a carrier lifetime τ o = 10-7 sec within the depletion region. Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s09.html Note: On each homework and report submission, please give your name, the due date, assignment number and the course number....
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This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.
- Spring '08