646s09hw6 - the built-in voltage and the donor...

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ELEG 646 ; ELEG 446 - Nanoelectronic Device Principles Spring 2009 Homework #6 - due Friday, 27 March 2009, 4 pm 1. Problem 4.7 in chapter 4, Muller & Kamins, p. 222 in 3rd edition. 2. The donor and acceptor concentrations on the n- and p-sides of a Si abrupt p-n junction are equal to 10 16 cm -3 . The whole semiconductor is illuminated uniformly such that the hole concentration in the neutral n-region rises to 10 13 cm -3 . No current is allowed to flow. What will be the reading of a voltmeter whose positive terminal is connected to the p-side at 290 K? (Hint: use law of the junction). 3. A Si abrupt step p-n junction has N A = 3 x 10 18 cm -3 on the p-side and an area of 1.6 x 10 -3 cm 2 . The junction capacitance is 18 pF at a reverse bias of 3.2 V and 12 pF at 8.2 V. Calculate
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Unformatted text preview: the built-in voltage and the donor concentration N D on the n-side. 4. A long-base Si abrupt p-n junction diode with a junction area of 10-2 cm-2 has N D = 10 18 cm-3 , N A = 10 17 cm-3 , τ p = 10-8 sec, τ n = 10-6 sec, D p = 5.2 cm 2 sec-1 , and D n = 20 cm 2 sec-1 . Calculate the diode current at a temperature of 300 K under a forward bias of 0.5 V. Include the generation-recombination current and assume a carrier lifetime τ o = 10-7 sec within the depletion region. Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s09.html Note: On each homework and report submission, please give your name, the due date, assignment number and the course number....
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This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.

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