646s10hw10m

# 646s10hw10m - sec-1 . 4. The emitter and collector regions...

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ELEG 646 ; ELEG 446 - Nanoelectronic Device Principles Spring 2010 Homework #10 - due Tuesday, 11 May 2010, in class 1. Problem 3.15 in chapter 3, p. 173 of Muller, Kamins & Chan (3rd edition). 2. Problem 6.2 in chapter 6, p. 321 of Muller, Kamins & Chan (3rd edition). 3. A symmetrical Ge p-n-p transistor with emitter-base and collector-base junctions, each 1 mm in diameter, has an impurity concentration of 5 x 10 15 cm -3 in the base and 10 18 cm -3 in the emitter and the collector. The base-width is 10 μ m, τ B = 4 x 10 -6 sec, τ E = 10 -8 sec, and the emitter region is much longer than the diffusion length L E . Calculate the injection efficiency γ , base transport factor α T , forward current gain α , and common emitter gain β (h FE) of the transistor. Take D B = 47 cm 2 sec -1 and D E = 52 cm 2
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Unformatted text preview: sec-1 . 4. The emitter and collector regions of a Si alloyed p-n-p transistor are heavily doped, and the impurity concentration in the base is 1E15cm-3 . Calculate the base-width that will make the avalanche breakdown voltage (BV CBO ) equal to the punch-through voltage. The punch through voltage is given by: V PT = q N d W bo 2 /(2 ε s ) , where W bo is the metallurgical base width. Assume that avalanche breakdown occurs when the maximum field strength in the C-B depletion region becomes E crit = 5 x 10 5 V/cm. . Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s10.html Note: On each homework and report submission, please give your name, the due date, assignment number and the course number....
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## This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.

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