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Unformatted text preview: sec-1 . 4. The emitter and collector regions of a Si alloyed p-n-p transistor are heavily doped, and the impurity concentration in the base is 1E15cm-3 . Calculate the base-width that will make the avalanche breakdown voltage (BV CBO ) equal to the punch-through voltage. The punch through voltage is given by: V PT = q N d W bo 2 /(2 ε s ) , where W bo is the metallurgical base width. Assume that avalanche breakdown occurs when the maximum field strength in the C-B depletion region becomes E crit = 5 x 10 5 V/cm. . Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s10.html Note: On each homework and report submission, please give your name, the due date, assignment number and the course number....
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This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.
- Spring '08