646s11hw5l - referred to is in Section 4.1 on page 180, not...

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ELEG 646 ; ELEG 446 - Nanoelectronic Device Principles Spring 2011 Homework #5 - due Friday, 18 March 2011, in class 1. Calculate: (a) the minority carrier diffusion current density and (b) the majority carrier drift current density along one-dimension in a sample of n-type silicon. This sample is 100 μ m long, with uniform donor doping with N D = 1 x 10 18 cm -3 . Assume that the minority carrier concentration profile is maintained as a linear variation (by illumination and injection), from equilibrium p no (calculate this value) at the left side (x=0), to p n (x=100 μ m) = p no + 10 15 cm -3 at the right hand side. The applied bias is 2 volts at x=0 and the right side is grounded. 2. Problem 4.1 in chapter 4, Muller & Kamins, p. 222 in 3rd edition. 3. Problem 4.4 in chapter 4, Muller & Kamins, p. 222 in 3rd edition. (Hints: the example
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Unformatted text preview: referred to is in Section 4.1 on page 180, not section 4.2.) 4. Problem 4.6 (a) only in chapter 4, Muller & Kamins, p. 222 in 3rd edition. Hint: assume that the depletion thickness is known and that the depletion edges lie at x d0 /2; find n and p in terms of n i and E i at these two points, and thus determine the two values of E i E F . Find from the difference in these. 5. Problem 5.6 in chapter 5, Muller & Kamins, p. 275 in 3rd edition. (Hint: start with Eqn. 5.3.10, and for short base diode, recombination in the bulk can be neglected.) Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s11.html Include your name, due date, assignment number, and course number on each submission....
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