646s11hw7r

# 646s11hw7r - ELEG 646 ELEG 446 Nanoelectronic Device...

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Unformatted text preview: ELEG 646 ; ELEG 446- Nanoelectronic Device Principles Spring 2011 Homework #7 - due Friday, 8 April 2011, in class 1. Problem 5.11 (c) and (d) in chapter 5, Muller &amp;amp; Kamins, p. 276 in 3rd edition. 2. Problem 5.12 in chapter 5, Muller &amp;amp; Kamins, p. 276 in 3rd edition. Hint: on p and n sides, plot J n , J p , and J tot versus x in terms of whole number multiples of units of current, so that if a given current is twice or half another current for example, then the relative values for these components (in arbitrary units) are reflected in whole number multiples on your vertical axis. 3. Two ideal p-n junction diodes are connected in series across a 1 V battery such that both of them are forward biased. One diode has I = 10-5 A and another I = 10-8 A. Calculate the current through the circuit and the voltage drop across each diode at 300K. 4. A long-base Germanium p-n junction diode has an abrupt junction with uniformly doped regions. The p- side has a resistivity of 1 -cm and the n-...
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## This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.

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646s11hw7r - ELEG 646 ELEG 446 Nanoelectronic Device...

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