646s11hw10f - ELEG 646; ELEG 446 - Nanoelectronic Device...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
ELEG 646 ; ELEG 446 - Nanoelectronic Device Principles Spring 2011 Homework #10 - due Friday, 29 April 2011, in class 1. Problem 6.1 in chapter 6 of Muller & Kamins, p. 321 in 3rd edition. 2. Consider the thermionic emission model of a Schottky barrier diode, and use the standard I-V equation with ideality factor η . The measured forward current at 300 K is 3 x 10 –8 A at 0.2 V and 1 x 10 –6 A at 0.3 Volts. The diode area is 0.2 cm 2 and φ B = 1V. Calculate the saturation current I s , the ideality factor η , and the value of A* (Richardson’s constant). 3. Draw the energy band diagrams for an n-p-n transistor when it is biased in (a) the saturation region, and (b) the cutoff region. 4. A symmetrical Ge p-n-p transistor with emitter-base and collector-base junctions, each 1 mm in diameter, has an impurity concentration of 5 x 10 15 cm -3 in the base and 10 18 cm -3 in the emitter and the collector. The base-width is 10 µ m, τ B = 4 x 10 -6 sec, τ E = 10 -8 sec, and the emitter region is much longer
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.

Ask a homework question - tutors are online