Unformatted text preview: Problem 7.1 in chapter 7 of Muller & Kamins, p. 375 in 3rd edition. Hint: for an npn transistor, use Eqns. 7.1.1 with constant base doping, and 7.1.3, and 7.1.4 (simplifies with constant base doping and low level injection). 4. Consider a Si double-gate n-channel JFET with the following parameters: N A = 3 x 10 18 cm-3 , N D = 10 15 cm-3 , a = 2 µ m, L = 20 µ m, and Z/L = 5. Assume µ n = 1000 cm 2 /V-sec and T = 300K. (a) Calculate the built-in voltage, the pinch-off voltage, and the value of the open channel conductance. 5. Problem 8.1 in chapter 8 of Muller & Kamins, p. 422 in 3rd edition. Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s11.html Include your name, due date, assignment number, and course number on each submission....
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This note was uploaded on 12/02/2011 for the course ELEG 646 taught by Professor Staff during the Spring '08 term at University of Delaware.
- Spring '08