homework3 - Homework 3 1. Consider an abrupt p-n diode -...

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Homework 3 1. Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with as many donors in the n -type region as acceptors in the p -type region and a maximum electric field of -13 kV/cm and a total depletion layer width of 1 μ m. (assume ε s / ε 0 = 12) a) What is the applied voltage, V a ? b) What is the built-in potential of the diode? c) What are the donor density in the n -type region and the acceptor density in the p -type region? d) What is the intrinsic carrier density of the semiconductor if the temperature is 300 K ? 2. A silicon p-n junction ( N a = 10 15 cm -3 , w p = 1 μ m and N d = 4 x 10 16 cm -3 , w n = 1 μ m) is biased with V a = 0.5 V. Use μ n = 1000 cm 2 /V-s and μ p = 300 cm 2 /V-s. The minority carrier lifetime is 10 μ s and the diode area is 100 μ m by 100 μ m. a) Calculate the built-in potential of the diode. b) Calculate the depletion layer widths, x n and x p , and the widths of the quasi-neutral regions.
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homework3 - Homework 3 1. Consider an abrupt p-n diode -...

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