homework3

# homework3 - Homework 3 1 Consider an abrupt p-n diode made...

This preview shows pages 1–2. Sign up to view the full content.

Homework 3 1. Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with as many donors in the n -type region as acceptors in the p -type region and a maximum electric field of -13 kV/cm and a total depletion layer width of 1 μ m. (assume ε s / ε 0 = 12) a) What is the applied voltage, V a ? b) What is the built-in potential of the diode? c) What are the donor density in the n -type region and the acceptor density in the p -type region? d) What is the intrinsic carrier density of the semiconductor if the temperature is 300 K ? 2. A silicon p-n junction ( N a = 10 15 cm -3 , w p = 1 μ m and N d = 4 x 10 16 cm -3 , w n = 1 μ m) is biased with V a = 0.5 V. Use μ n = 1000 cm 2 /V-s and μ p = 300 cm 2 /V-s. The minority carrier lifetime is 10 μ s and the diode area is 100 μ m by 100 μ m. a) Calculate the built-in potential of the diode. b) Calculate the depletion layer widths, x n and x p , and the widths of the quasi-neutral regions.

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 2

homework3 - Homework 3 1 Consider an abrupt p-n diode made...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online