Unformatted text preview: -1 C/cm 3 . 3. A n-type MOSFET ( L = 1 μ m, t ox = 15 nm, V T = 1 V and μ n = 300 cm 2 /V-sec) must provide a current of 20 mA at a drainsource voltage of 0.5 Volt and a gate-source voltage of 5 Volt. How wide should the gate be? 4. Consider an n-channel MOSFET with n+ poly-Si gate, T oxe = 10 nm, and body doping N A =5x10 16 cm-3 . Assume W=10 μ m, V GS - V T = 3V, and Ε sat (critical electric field for velocity saturation) = 2x10 4 V/cm. a) Find V Dsat for i. L = 1 μ m. Is this a long-channel device or a short-channel device? ii. L = 0.1 μ m. Is this a long-channel device or a short-channel device? For the questions below, assume L = 0.5um. b) Without considering velocity saturation, what is I DS at V DS = 1 V? c) What is I DS at V DS = 1 V with velocity saturation? d) Calculate the subthreshold swing, S....
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- Spring '11
- P-n junction, 5 nm, 5 Volt, Toxe, Εsat