Lecture23 - ENU 4612C/5615C Nuclear Radiation Detection and...

Info iconThis preview shows pages 1–12. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: ENU 4612C/5615C Nuclear Radiation Detection and Instrumentation Lecture 23 Semiconductor Detectors (2) The Action of Ionizing Radiation fast charged particle valence electron An Attempt of a “Semiconductor Ionization Chamber 1 mm V (500 V) 2 1 cm An Attempt of a “Semiconductor Ionization Chamber” cm ⋅ Ω × ≈ 4 10 5 : Si pure" " For ρ : Current Leakage ( ) ( ) ( ) ( ) A cm cm V cm A V A R V 1 . 1 . 10 5 500 1 t t V I 4 2 = ⋅ ⋅ Ω × ⋅ = ⋅ ⋅ = ⋅ = = ρ ρ : pairs) h - e 10 (for Current Signal 5 ( ) A C t Q c 6 8 19 5 10 sec 10 10 6 . 1 10 I − − − ≅ × ⋅ ≅ = Influence of Leakage Current on the Signal/Noise Ratio: s-8 5 10 over collected pairs h - e 10 : Signal : time same over collected electrons current leakage of Number ( ) ( ) 9 19 8 10 6 / 10 6 . 1 10 1 . n × = × ⋅ = − − e C s A 4 10 8 n n in n Fluctuatio × = ≅ 1 10 8 10 4 5 ≈ × = ∴ N S 6 3 10 by leakage reduce be to need , 10 S/N a achieve order to In = Electrical Contacts OHMIC BLOCKING type- n type- p Formation of a Diffused Junction ION CONCENTRAT DISTANCE type- n Si type- p D N A N apor impurity v n-p Junction ION CONCENTRAT i i p , n n p A N D N type- n type- p n-p Junction x x x (x) ξ (x) ϕ (x) ρ donors ionized acceptors filled DEPLETION REGION C V n-p Junction (x) ϕ type- n type- p x C V C V BAND CONDUCTION BAND VALENCE ELECTRON ENERGY Reverse Biasing V V C + V BIAS REVERSE- V BAND CONDUCTION BAND VALENCE ELECTRON ENERGY n p Derivation of Junction Properties...
View Full Document

{[ snackBarMessage ]}

Page1 / 33

Lecture23 - ENU 4612C/5615C Nuclear Radiation Detection and...

This preview shows document pages 1 - 12. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online