Class-activity-27

# Class-activity-27 - V FB . (Ignore the presence of source...

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1 ECSE-2210 Microelectronics Technology Class Activity 27 1. a. Find the threshold voltage for a Si n-channel MOS transistor with N A = 10 17 cm –3 , Φ ms = – 0.95 eV, Q i = 10 11 q / cm 2 , and a SiO 2 thickness d = 200 Å. Hint : First calculate V FB . Add this to V T (= threshold value for the ideal case) to get the actual V T . b. Repeat the above for a p-channel device ( N D = 10 17 cm –3 ) with the same material parameters, except ms . ms for this case can be calculated from the change in E F compared to that of part (a). c. Plot qualitatively the C - V curves for the above two MOS capacitors at high frequency. Mark important points in the curves. Specifically, show the effect of

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Unformatted text preview: V FB . (Ignore the presence of source and drain for this problem). 2 d. Find the dose of boron (ions/cm 2 ) required to change the threshold voltage of the above n-channel device to + 1 V. Assume that the implanted boron resides just below the Si surface and all impurities are ionized. Is this an enhancement mode device or a depletion mode device? e. Find the dose of ( boron or phosphorus: choose one ) required to change the threshold voltage of the above p-channel device to 1 V. Assume that the implanted ions reside just below the Si surface. Is this an enhancement mode device or a depletion mode device?...
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## This note was uploaded on 12/13/2011 for the course EECS EE573 taught by Professor Autine during the Spring '09 term at A.T. Still University.

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Class-activity-27 - V FB . (Ignore the presence of source...

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